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| 2SK1637, 2SK2422 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM D G 1 23 1. Gate 2. Drain 3. Source S 2SK1637, 2SK2422 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1637 2SK2422 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C VGSS ID ID(pulse)* IDR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 600 650 30 4 16 4 35 150 -55 to +150 Unit V V A A A W C C 2 2SK1637, 2SK2422 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol Min 2SK1637 V(BR)DSS 2SK2422 V(BR)GSS IGSS 600 650 30 -- -- -- -- -- -- 10 250 V A A V S pF pF pF ns ns ns ns V ns IF = 4 A, VGS = 0 IF = 4 A, VGS = 0, diF/dt = 100 A/s ID = 2 A, VGS = 10 V, RL = 15 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 500 V, VGS = 0 VDS = 550 V, VGS = 0 VGS(off) 2.0 -- -- |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 2.2 -- -- -- -- -- -- -- -- -- -- 1.8 2.0 3.5 600 140 25 8 30 60 35 0.9 300 3.0 2.4 2.6 -- -- -- -- -- -- -- -- -- -- ID = 2 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz 1 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1637 IDSS 2SK2422 Gate to source cutoff voltage ID = 1 mA, VDS = 10 V ID = 2 A, VGS = 10 V * 1 Static Drain to source 2SK1637 RDS(on) on state resistance 2SK2422 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test See characteristics curves of 2SK1402, 2SK1402A. 3 2SK1637, 2SK2422 Power vs. Temperature Derating 60 Maximum Safe Operation Area 50 30 Drain Current ID (A) O is per lim at ite ion d in by th R is D are S (o a n) Pch (W) 10 3 1 0.3 0.1 10 40 s 0 10 Channel Dissipation DC O PW K2422 pe 20 Ta =25C 1 10 ms ra m tio s n (T (1 S ho C = 25 t) C ) K1637 = s 0 50 Case Temperature 100 TC (C) 150 0.05 1 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.2 0.1 1.0 TC = 25C 0.1 ch-c (t) = S (t) * ch-c ch-c = 3.57C/W, TC = 25C PDM e 0.05 0.02 0.03 0.01 10 ls 0.01 hot Pu 1S T 1m 10 m 100 m Pulse Width PW (s) PW D = PW T 100 1 10 4 2SK1637, 2SK2422 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 5 |
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